Electro-optical effects at the discrete and continuum exciton states in GaAs
- 30 June 1973
- journal article
- Published by Elsevier in Surface Science
- Vol. 37, 841-848
- https://doi.org/10.1016/0039-6028(73)90372-5
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Electric-Field—Induced Interference Effects at the Ground Exciton Level in GaAsPhysical Review Letters, 1972
- Observation of Polaritons in GaAs: A New Interpretation of the Free-Exciton Reflectance and LuminescencePhysical Review Letters, 1971
- Differential ElectroabsorptionPhysical Review B, 1971
- Wannier Exciton in an Electric Field. II. Electroabsorption in Direct-Band-Gap SolidsPhysical Review B, 1971
- Wannier Exciton in an Electric Field. I. Optical Absorption by Bound and Continuum StatesPhysical Review B, 1970
- Electroabsorption in Semiconductors: The Excitonic Absorption EdgePhysical Review B, 1970
- Influence of spatially dependent perturbations on modulated reflectance and absorption of solidsSolid State Communications, 1969
- Theoretical and Experimental Effects of Spatial Dispersion on the Optical Properties of CrystalsPhysical Review B, 1963