The growth behavior of Pb0.95La0.05(Zr0.7Ti0.3)0.9875O3 films on silicon substrates synthesized by pulsed laser deposition

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Abstract
The highly (110) textured Pb0.95La0.05(Zr0.7Ti0.3)0.9875O3 (PLZT) films have been successfully grown on SrTiO3(STO)‐buffered silicon substrates. The films, deposited by pulsed laser deposition process, are assumed to form via a two‐step process, i.e., cluster adherence and phase transformation. The beneficial effect of using STO as buffer layers involves enhancing the kinetics of phase transformation from amorphous phase to perovskite. The loss of Pb species from the films is thereby suppressed. The optimum dielectric constants obtained are around εr=490 for PLZT/STO/Si films deposited at 550 °C (1 mbar oxygen pressure, PO2) and post‐annealed at 550 °C (1 atm PO2). The corresponding charge storage density is around Qc≂1.5 μC/cm2 at 50 kV/cm applied field strength.