Point defect/dopant diffusion considerations following preamorphization of silicon via Si+ and Ge+ implantation

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Abstract
A comparison has been made between two shallow preamorphization techniques using Si+ and Ge+ implantation, followed by B+ implantation and rapid thermal annealing (RTA). The subsequent impact on boron diffusion profiles and extended defects have been examined experimentally with secondary ion mass spectroscopy and cross‐section transmission electron microscopy, and theoretically with the predict computer program, in an attempt to generalize the observations. Enhanced or retarded B diffusion during RTA has been correlated with the relative depths of the original amorphous/crystalline interface and the as‐implanted B profiles, with ion type used for preamorphization, and with the initial type and relative location of the radiation‐induced point defects. In general, Si+ self‐implant samples showed less B profile broadening than Ge+ implant samples following RTA at 1050 °C for 10 s. The conditions necessary for complete annihilation of end‐of‐range interstitial loops for Si+ self‐amorphization are specified.