Influence of implant induced vacancies and interstitials on boron diffusion in silicon
- 3 August 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (5) , 331-333
- https://doi.org/10.1063/1.98431
Abstract
A dependence of boron anomalous diffusion on defect depth position has been observed after furnace and electron beam annealing of samples damaged with 28Si ions implanted at different energies. This behavior was correlated with the vacancy and interstitial excesses, produced under bombardment in the surface region and in depth, respectively. The spatial separation of these point defects was evidenced by the analysis of the intensity profiles obtained by double-crystal x-ray diffraction.Keywords
This publication has 12 references indexed in Scilit:
- Defect distribution in ion implanted silicon: comparison between Monte Carlo simulation and triple crystal X-ray measurementsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Transient enhanced diffusion of dopants in silicon induced by implantation damageApplied Physics Letters, 1986
- Enhanced diffusion phenomena during rapid thermal annealing of preamorphized boron-implanted siliconPhysica Status Solidi (a), 1986
- Defect distribution in ion-implanted silicon. A Monte Carlo simulationPhysica Status Solidi (a), 1986
- Double-crystal X-ray diffraction analysis of low-temperature ion implanted siliconSolid-State Electronics, 1985
- Rapid thermal annealing of dopants implanted into preamorphized siliconJournal of Applied Physics, 1985
- Kinetics of thermal nitridation processes in the study of dopant diffusion mechanisms in siliconApplied Physics Letters, 1985
- Diffusion Modeling of the Redistribution of Ion Implanted ImpuritiesMRS Proceedings, 1985
- Formation of Shallow P+ Junctions Using Two-Step AnnealsMRS Proceedings, 1984
- A Simple Model for the Transient, Enhanced Diffusion of Ion-Implanted Phosphorus in SiliconMRS Proceedings, 1984