Transient enhanced diffusion of dopants in silicon induced by implantation damage

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Abstract
The effects of implantation damage on B, P, As, and Sb diffusion in Si during rapid thermal annealing and conventional heat treatment at low temperature (750–900 °C) have been investigated. Comparison of dopant profiles and junction depths in damaged and undamaged regions demonstrates that a Si+ implantation in the typical conditions used for preamorphization in p+/n shallow junction fabrication, produces a markedly enhanced diffusion for B and P atoms, while inducing only a negligible increase of As and Sb diffusivity. For all dopants enhanced diffusion shows a transient behavior and produces an increase in junction depth which is higher the lower the annealing temperature. This corroborates the opinion that rapid thermal annealing is a suitable technique for shallow junction fabrication.