Investigation of transient diffusion effects in rapid thermally processed ion implanted arsenic in silicon
- 15 October 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (8) , 848-850
- https://doi.org/10.1063/1.96423
Abstract
Arsenic dopant profile motion in ion implanted Si samples annealed for a few seconds at 1100 °C is adequately described by a model involving concentration enhanced diffusion. There is no evidence of an initial rapid diffusive transient. Diffusion in samples preannealed at 550 °C is consistent with this result.Keywords
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