Rapid isothermal annealing of As-, P-, and B-implanted silicon
- 15 June 1984
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 55 (12) , 4162-4170
- https://doi.org/10.1063/1.333034
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Characterization of Ion Implanted Silicon Annealed with a Graphite Radiation SourceIEEE Transactions on Nuclear Science, 1983
- Rapid isothermal anneal of 75As implanted siliconApplied Physics Letters, 1982
- Rapid isothermal annealing of ion implantation damage using a thermal radiation sourceApplied Physics Letters, 1981
- Activation of arsenic-implanted silicon using an incoherent light sourceApplied Physics Letters, 1981
- Transient annealing of arsenic-implanted silicon using a graphite strip heaterApplied Physics Letters, 1981
- Shallow junctions by high-dose As implants in Si: experiments and modelingJournal of Applied Physics, 1980
- Supersaturated substitutional alloys formed by ion implantation and pulsed laser annealing of group-III and group-V dopants in siliconJournal of Applied Physics, 1980
- Regrowth behavior of ion-implanted amorphous layers on 〈111〉 siliconApplied Physics Letters, 1976
- The Diffusion of Ion‐Implanted Arsenic in SiliconJournal of the Electrochemical Society, 1975
- Self-Diffusion in Intrinsic and Extrinsic SiliconJournal of Applied Physics, 1967