Regrowth behavior of ion-implanted amorphous layers on 〈111〉 silicon
- 15 July 1976
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 29 (2) , 92-93
- https://doi.org/10.1063/1.88980
Abstract
The regrowth of Si crystal from amorphous layers created by Si implantation into 〈111〉, 〈100〉, and 〈110〉 Si was studied. Channeling effect measurements show that the growths on the 〈110〉 and 〈100〉 substrates are epitaxial and linear with time. For the 〈111〉 samples the growth at 550 °C was significantly slower and nonlinear in time and the regrown layer contained a high concentration of defects. TEM micrographs indicate the presence of stacking faults and/or microtwins in the 〈111〉 samples.Keywords
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