Formation of Shallow P+ Junctions Using Two-Step Anneals
- 1 January 1984
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Annealing of shallow (Rp∼ 20-nm) boron-implanted layers in silicon using electron beamsIEEE Electron Device Letters, 1984
- Rapid thermal annealing of BF2+implanted, preamorphized siliconIEEE Electron Device Letters, 1983
- Short Time annealing of As and B Ion Implanted Si using Tungsten-Halogen LampsMRS Proceedings, 1983
- Rapid Annealing of SiliconMRS Proceedings, 1983