Double-crystal X-ray diffraction analysis of low-temperature ion implanted silicon
- 30 September 1985
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 28 (9) , 933-943
- https://doi.org/10.1016/0038-1101(85)90087-5
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Effect of diffuse scattering in the strain profile determination by double crystal X-ray diffractionPhysica Status Solidi (a), 1985
- Residual lattice disorder in self-implanted silicon after pulsed laser irradiationPhysica Status Solidi (a), 1982
- Transmission electron microscopy observations of low-temperature ion implanted (100) siliconSolid-State Electronics, 1981
- Strain profiles in ion-doped silicon obtained from X-ray rocking curvesPhysica Status Solidi (a), 1980
- X-ray study of lattice strain in boron implanted laser annealed siliconJournal of Applied Physics, 1980