Residual lattice disorder in self-implanted silicon after pulsed laser irradiation
- 16 April 1982
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 70 (2) , 691-701
- https://doi.org/10.1002/pssa.2210700239
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Kinematical x-ray diffraction in nonuniform crystalline films: Strain and damage distributions in ion-implanted garnetsJournal of Applied Physics, 1981
- Origin of the defects observed after laser annealing of implanted siliconApplied Physics Letters, 1981
- Defect photoluminescence from pulsed-laser-annealed ion-implanted SiApplied Physics Letters, 1981
- In-depth oxygen contamination produced in silicon by pulsed laser irradiationJournal of Physics D: Applied Physics, 1980
- A device for laser beam diffusion and homogenisationJournal of Physics E: Scientific Instruments, 1979
- The Strain Distribution of the Interface Between Substrate and Epitaxial Layer of Silicon by X‐Ray Double Crystal MethodJournal of the Electrochemical Society, 1979
- Crystalline and magnetic properties of an ion-implanted layer in bubble garnet filmsJournal of Applied Physics, 1978
- Two-stage laser annealing of lattice disorder in phosphorus implanted siliconPhysica Status Solidi (a), 1978
- Defects in laser damaged silicon observed by DLTSPhysica Status Solidi (a), 1978
- X-ray Pendellösung fringes in Darwin reflectionActa Crystallographica Section A, 1968