Defect distribution in ion implanted silicon: comparison between Monte Carlo simulation and triple crystal X-ray measurements
- 1 April 1987
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 22 (4) , 497-498
- https://doi.org/10.1016/0168-583x(87)90148-0
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Defect distribution in ion-implanted silicon. A Monte Carlo simulationPhysica Status Solidi (a), 1986
- Double-crystal X-ray diffraction analysis of low-temperature ion implanted siliconSolid-State Electronics, 1985
- On the Increased Sensitivity of X-Ray Rocking Curve Measurements by Triple-Crystal DiffractometryPhysica Status Solidi (a), 1985
- Investigation of Interstitials in Electron-Irradiated Aluminum by Diffuse-X-Ray Scattering ExperimentsPhysical Review B, 1973