Ultra-high speed, low power monolithic photoreceiverusing InP/InGaAs double-heterojunction bipolar transistors
- 5 June 1997
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 33 (12) , 1047-1048
- https://doi.org/10.1049/el:19970672
Abstract
A first 40 Gbit/s RZ response is successfully obtained for monolithic photoreceivers by using a pin/DHBT configuration in which the pin-PD is formed on the layer structure that corresponds to the base-to-collector region of the DHBTs. The power dissipation of the photoreceiver is only 54 mW.Keywords
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