A 1-GHz operational transconductance amplifier in SOI technology
- 19 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 127-128
- https://doi.org/10.1109/soi.1995.526493
Abstract
This work investigates the feasibility of realisation of SOI CMOS Operational Transconductance Amplifiers (OTA) operating up to 1 GHz. In contrast to a previously published microwave wideband amplifier driving low ohmic resistive line termination, OTAs for Switched-Capacitor (SC) applications need a high impedance and capacitive output node. In addition applications such as sigma-delta converters require fast OTAs. In order to reduce the settling time, the transfer function should also include a minimal amount of poles and zeros. Consequently in spite of its low voltage gain, this single-stage OTA could be of interest for high-frequency applications Author(s) Eggermont, J.-P. Microelectron. Lab., Univ. Catholique de Louvain, Belgium Flandre, D. ; Gillon, R. ; Colinge, J.P.Keywords
This publication has 2 references indexed in Scilit:
- Microwave wideband amplifiers in bulk-CMOS and CMOS/SIMOX technologiesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1995
- The design of sigma-delta modulation analog-to-digital convertersIEEE Journal of Solid-State Circuits, 1988