Inhomogeneous Transport Regime in Disordered Materials

We propose the existence of an inhomogeneous transport regime in the disordered materials in which a gradual metal-semiconductor transition occurs. This regime is sub-divided into pseudometallic and pseudosemiconducting parts by a percolation threshold. On the basis of an effective-medium theory, we propose that the pseudometallic regime falls in the density range 8.2-9.3 g/${\mathrm{cm}}^3$ in liquid Hg and in the temperature range 1200°K to below 670°K in liquid Te.