Growth of GaP single crystals by the synthesis, solute diffusion method
- 29 February 1976
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 32 (2) , 216-220
- https://doi.org/10.1016/0022-0248(76)90035-x
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Efficient green electroluminescent junctions in GaPPublished by Elsevier ,2002
- Liquid phase epitaxy processes for GaP LED'sJournal of Crystal Growth, 1974
- Diffusion of Phosphorus in Gallium MeltJournal of the Electrochemical Society, 1974
- Determination of the Solidus and Gallium and Phosphorus Vacancy Concentrations in GaPJournal of the Electrochemical Society, 1974
- A new method of growing GaP crystals for light-emitting diodesProceedings of the IEEE, 1973
- Vapor phase epitaxial materials for LED applicationsProceedings of the IEEE, 1973
- Liquid encapsulated Czochralski growth of 35 mm diameter single crystals of GaPJournal of Crystal Growth, 1973
- Correlation of Defect-Impurity Interactions in GaP with Local Variations in PhotoluminescenceApplied Physics Letters, 1971
- Etching Studies of Impurity Precipitates in Pulled GaP CrystalsJournal of the Electrochemical Society, 1971
- Méthode de synthése et de croissanceápartir de solution, de monocristaux homogénes de semiconducteursJournal of Crystal Growth, 1968