Correlation of Defect-Impurity Interactions in GaP with Local Variations in Photoluminescence
- 1 September 1971
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 19 (5) , 153-155
- https://doi.org/10.1063/1.1653865
Abstract
A direct correlation between small-scale spatial inhomogeneities in the photoluminescent efficiency of GaP LEC wafers and local variations in the density of shallow saucer-shaped chemical etch pits has been made. These variations are particularly evident in the vicinity of dislocations, suggesting that the dislocations act as a sink for the impurity or crystal defect responsible for the formation of saucer pits. In addition, larger-scale spatial variations in PL efficiency and saucer-pit density, believed to be related to the LEC crystal-growth procedure, are mirrored in the contrast obtained on Borrmann x-ray topographs.Keywords
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