Comparison of Liquid-Encapsulated and Solution-Grown Substrates for Efficient GaP Diodes
- 1 November 1969
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 40 (12) , 4984-4988
- https://doi.org/10.1063/1.1657331
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Gallium Phosphide Double-Epitaxial DiodesJournal of the Electrochemical Society, 1969
- Pulling of gallium phosphide crystals by liquid encapsulationJournal of Crystal Growth, 1968
- Pulled crystals of gallium phosphide by the liquid encapsulation methodJournal of Crystal Growth, 1968
- The Defect Structure of GaP Crystals Grown from Gallium Solutions, Vapor Phase and Liquid Phase Epitaxial DepositionJournal of the Electrochemical Society, 1968
- Electrical and Electroluminescent Properties of Gallium Phosphide DiffusedJunctionsPhysical Review B, 1966
- Formation of Built-in Light-emitting Junctions in Solution-grown GaP Containing Shallow Donors and AcceptorsIBM Journal of Research and Development, 1966
- Studies of Individual Dislocations in Crystals by X-Ray Diffraction MicroradiographyJournal of Applied Physics, 1959