Investigation of Microprecipitates in Highly Te-Doped GaAs Crystals
- 1 May 1968
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 7 (5) , 490-497
- https://doi.org/10.1143/jjap.7.490
Abstract
Inhomogeneities in highly Te-doped, melt-grown GaAs crystals carrier concentrations more than 1.6×1018 cm-3 have been investigated using etching technique, X-ray anomalous transmission, and electron microprobe analysis. Microstrains, arising from impurity precipitates produced either fine etch pits on the etched surface or contrast of small specks on the X-ray topographs. A microprecipitates-free was observed around a dislocation, and qualitatively analyzed. Small angle boundaries were observed, and the impurity concentration difference across the boundary was detected.Keywords
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