Technology of gallium arsenide
- 31 May 1960
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 1 (2) , 97-98
- https://doi.org/10.1016/0038-1101(60)90041-1
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- The Behaviour of Some Impurities in III-V CompoundsProceedings of the Physical Society, 1959
- Diffusion, solubility, and electrical behavior of copper in gallium arsenideJournal of Physics and Chemistry of Solids, 1958
- The preparation and properties of gallium arsenide single crystalsJournal of Physics and Chemistry of Solids, 1958
- An apparatus for growing single crystals of gallium arsenideJournal of Scientific Instruments, 1957
- Notizen: Herstellung von InAs- und GaAs-EinkristallenZeitschrift für Naturforschung A, 1956
- Über Einbau und Wirkung von Fremdstoffen in IndiumarsenidZeitschrift für Naturforschung A, 1956
- Single Crystals of Exceptional Perfection and Uniformity by Zone LevelingBell System Technical Journal, 1956
- Zur Stabilität senkrechter SchmelzzonenZeitschrift für Naturforschung A, 1956
- Purification of a Metal by Zone-refining one of its SaltsNature, 1956
- Herstellung und elektrische Eigenschaften von InP und GaAsZeitschrift für Naturforschung A, 1955