Shallow junction formation by preamorphization with tin implantation

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Abstract
Amorphizing n‐type 〈100〉 silicon by tin implantation prior to implanting 10 keV boron and then annealing for 30 min at 800 °C results in a 0.22‐μm‐deep p+/n junction. The implanted tin prevents boron channeling, enhances the quality of the solid phase epitaxial regrowth of the silicon, and shows no measurable diffusion. A discontinuous band of dislocation loops, 20–30 nm in diameter, with a density below 1010 cm−2 remains at the original amorphous‐crystalline interface after annealing. Junctions are nearly ideal and are characterized at −5 V reverse bias by an areal leakage of −5 nA cm−2 and a peripheral leakage less than −0.1 fA μm−1.