Field induced anisotropy in amorphous Co100−xTix thin films

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Abstract
Co100−x Tix amorphous thin films were deposited by rf sputtering in the presence of a magnetic field applied parallel to the film plane. The deposition parameters were determined in order to obtain films with negligible perpendicular anisotropy Kp, small coercive field Hc, and a well‐defined in plane uniaxial anisotropy Ku. When the rf input power Ip is higher than a critical value, Kp is developed via a columnar structure, and for Ar pressure PAr higher than 3×10−3 Torr, Hc shows a large increases. Samples deposited under optimal conditions (Ip =100 W, PAr =3×10−3 Torr) present soft ferromagnetic properties and a large value of Ku, with 1.2×104<Ku 4 erg/cm3 for 7.5<xKu decreasing with decreasing Co content. The results suggest that Ku should be induced during the deposition process if one wants to obtain a large field induced anisotropy.