Influence of F and Cl on the recrystallization of ion-implanted amorphous Si
- 15 July 1984
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 56 (2) , 273-278
- https://doi.org/10.1063/1.333957
Abstract
The effect of fluorine and chlorine implantation on the solid-phase epitaxial regrowth of amorphized 〈100〉 Si was studied in intrinsic and heavily boron doped material. Annealings were performed at 500 and 600 °C. Both F and Cl retard the regrowth rate at 500 °C. The growth rates are much faster in B-doped than in undoped Si. Complete regrowth in B-doped Si is obtained for all investigated doses of fluorine up to 5×1015 F/cm2 at 600 °C for 30 min. The highest dose of chlorine (5×1015 Cl/cm2) stops the regrowth at this temperature.This publication has 7 references indexed in Scilit:
- Electrical properties of Si heavily implanted with boron molecular ionsJournal of Applied Physics, 1982
- Compensating impurity effect on epitaxial regrowth rate of amorphized SiApplied Physics Letters, 1982
- Recrystallization of implanted amorphous silicon layers. II. Migration of fluorine in BF+2-implanted siliconJournal of Applied Physics, 1979
- Recrystallization of implanted amorphous silicon layers. I. Electrical properties of silicon implanted with BF+2 or Si++B+Journal of Applied Physics, 1979
- The behaviour of boron molecular ion implants into siliconSolid-State Electronics, 1978
- Influence of 16O, 12C, 14N, and noble gases on the crystallization of amorphous Si layersJournal of Applied Physics, 1977
- Reordering of amorphous layers of Si implanted with 31P, 75As, and 11B ionsJournal of Applied Physics, 1977