Recrystallization of implanted amorphous silicon layers. I. Electrical properties of silicon implanted with BF+2 or Si++B+
- 1 January 1979
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (1) , 183-187
- https://doi.org/10.1063/1.325688
Abstract
Electrical properties of recrystallized amorphous silicon layers, formed by BF+2 implants or Si++B+ implants, have been studied by differential resistivity and Hall‐effect measurements. Electrical carrier distribution profiles show that boron atoms inside the amorphized Si layers can be fully activated during recrystallization at 550 °C. The mobility is also recovered. However, the tail of the B distribution, located inside a damaged region near the original amorphous‐crystalline interface, remains inactive. This inactive tail has been observed for all samples implanted with BF+2. Only in a thicker amorphous layer, formed for example by Si+ predamage implants, can the entire B profile be activated. The etch rate of amorphous silicon in HF and the effect of fluorine on the recrystallization rate are also reported.This publication has 16 references indexed in Scilit:
- Recrystallization of implanted amorphous silicon layers. II. Migration of fluorine in BF+2-implanted siliconJournal of Applied Physics, 1979
- Anomalous migration of fluorine and electrical activation of boron in BF+2-implanted siliconApplied Physics Letters, 1978
- Reordering of amorphous layers of Si implanted with 31P, 75As, and 11B ionsJournal of Applied Physics, 1977
- Versatile double AC Hall effect system for profiling impurities in semiconductorsJournal of Physics E: Scientific Instruments, 1977
- Disorder produced by high-dose implantation in SiApplied Physics Letters, 1976
- Chaneling effect measurements of the recrystallization of amorphous Si layers on crystal SiPhysics Letters A, 1975
- Technique used in Hall effect analysis of ion implanted Si and GeSolid-State Electronics, 1970
- High-Dose Implantations of P, As, and Sb in Silicon: A Comparison of Room-Temperature Implantations Followed by a 550°C Anneal and Implantations Conducted at 600°CJournal of the Electrochemical Society, 1970
- A model for the formation of amorphous Si by ion bombardmentRadiation Effects, 1970
- Hole and electron mobilities in doped silicon from radiochemical and conductivity measurementsJournal of Physics and Chemistry of Solids, 1960