A model for the formation of amorphous Si by ion bombardment
- 1 January 1970
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 6 (1) , 27-32
- https://doi.org/10.1080/00337577008235042
Abstract
The effective annealing of ion implantations in Si is aided by the formation of continuous amorphous layer. The amorphous layer regrows epitaxially at 500–600°C and incorporates the dopant in an electrically active, uncompensated form. A phenomenological model is proposed which, with adjustable parameters, accounts for the variation of the critical dose required to produce a continuous amorphous layer by ion bombardment with ion, target, temperature, and, with minor additional assumptions, dose rate.Keywords
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