ESR AND OPTICAL ABSORPTION STUDIES OF ION-IMPLANTED SILICON
- 1 March 1970
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 16 (5) , 205-208
- https://doi.org/10.1063/1.1653163
Abstract
The g value, line shape, and linewidth of an ESR signal in Si layers which have been damaged by ion implantation of Si, P, or As at room temperature are found to be identical to those of the electron states observed in amorphous Si films prepared by rf sputtering. Interference phenomena observed in the optical absorption spectra allow a determination of the depth to which the Si has been damaged by the energetic heavy ions. These two techniques together provide a new tool for investigating lattice disorder in ion‐implanted Si layers.Keywords
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