Hole and electron mobilities in doped silicon from radiochemical and conductivity measurements
- 1 November 1960
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 16 (3-4) , 279-284
- https://doi.org/10.1016/0022-3697(60)90157-8
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
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