Gain saturation in semiconductor lasers: Theory and experiment
- 1 July 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 18 (7) , 1078-1083
- https://doi.org/10.1109/jqe.1982.1071674
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Longitudinal mode behavior of PbSnTe buried heterostructure lasersApplied Physics Letters, 1981
- Liquid phase epitaxy of pbtese lattice-matched to pbsnteJournal of Electronic Materials, 1981
- Single-mode stabilization by traps in semiconductor lasersIEEE Journal of Quantum Electronics, 1980
- Buried-heterostructure AlGaAs lasersIEEE Journal of Quantum Electronics, 1980
- Transverse mode stabilized AlxGa1-xAs injection lasers with channeled-substrate-planar structureIEEE Journal of Quantum Electronics, 1978
- The power spectrum of injection lasers: The theory and experiment on a nonlinear model of lasingSolid-State Electronics, 1976
- Threshold characteristics of multimode laser oscillatorsJournal of Applied Physics, 1975
- Transverse-junction-stripe lasers with a GaAs p-n homojunctionIEEE Journal of Quantum Electronics, 1975
- Electron energy relaxation times in GaAs and InPApplied Physics Letters, 1972
- Spontaneous and Stimulated Recombination Radiation in SemiconductorsPhysical Review B, 1964