Longitudinal mode behavior of PbSnTe buried heterostructure lasers
- 1 December 1981
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 39 (11) , 872-874
- https://doi.org/10.1063/1.92589
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Gain broadening mechanism in various GaAlAs laser structuresJournal of Applied Physics, 1980
- Buried-heterostructure AlGaAs lasersIEEE Journal of Quantum Electronics, 1980
- Spectral band homogeneous broadening and narrow-band emission of AlGaAs/GaAs injection lasersIEEE Journal of Quantum Electronics, 1979
- Transverse mode stabilized AlxGa1-xAs injection lasers with channeled-substrate-planar structureIEEE Journal of Quantum Electronics, 1978
- Dependence of longitudinal mode structure on injected carrier diffusion in diode lasersIEEE Journal of Quantum Electronics, 1977
- In1−xGaxP1−zAsz double-heterojunction-laser operation (77 °K, yellow) in an external grating cavityJournal of Applied Physics, 1976
- Threshold characteristics of multimode laser oscillatorsJournal of Applied Physics, 1975
- Single longitudinal mode operation of cw junction lasers by frequency-selective optical feedbackApplied Physics Letters, 1974
- Effects of Drift and Diffusion of Excited States on Spatial Hole Burning and Laser OscillationJournal of Applied Physics, 1971
- Spectral Output of Semiconductor LasersJournal of Applied Physics, 1964