Gain broadening mechanism in various GaAlAs laser structures
- 1 November 1980
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (11) , 5949-5953
- https://doi.org/10.1063/1.327513
Abstract
Coupling of an external grating to a GaAlAs laser results in a strong enhancement of the selected mode and a reduction of the nonselected modes. The spectral form of this reduction is measured with a new sensitive experimental arrangement for three types of laser structures: proton bombarded stripe geometry, V‐groove and CSP lasers. This spectral form is determined by the gain curve of the laser only and is independent on the position of the selected mode, i.e., no spectral hole burning is observed at room temperature.This publication has 16 references indexed in Scilit:
- Spectral band homogeneous broadening and narrow-band emission of AlGaAs/GaAs injection lasersIEEE Journal of Quantum Electronics, 1979
- A condition of single longitudinal mode operation in injection lasers with index-guiding structureIEEE Journal of Quantum Electronics, 1979
- Broadening mechanism in semiconductor (GaAs) lasers: Limitations to single mode power emissionIEEE Journal of Quantum Electronics, 1978
- Longitudinal-mode behaviors of mode-stabilized AlxGa1−xAs injection lasersJournal of Applied Physics, 1978
- Homogeneous or inhomogeneous line broadening in a semiconductor laser: Observations on In1−xGaxP1−zAsz double heterojunctions in an external grating cavityApplied Physics Letters, 1976
- Single longitudinal mode operation of cw junction lasers by frequency-selective optical feedbackApplied Physics Letters, 1974
- Saturation behavior of the optical gain in GaAs injection lasersIEEE Journal of Quantum Electronics, 1974
- Spectral hole-burning and nonlinear-gain decrease in a band-to-level transition semiconductor laserIEEE Journal of Quantum Electronics, 1973
- Single-mode and single-frequency injection lasers (review)Soviet Journal of Quantum Electronics, 1973
- Behavior of spontaneous emission across threshold in GaAs junction lasersApplied Physics Letters, 1972