Polysilicon encapsulated local oxidation
- 1 March 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 12 (3) , 92-94
- https://doi.org/10.1109/55.75722
Abstract
Polysilicon encapsulated local oxidation (PELOX) is proposed as an effective isolation technique that satisfied advanced device requirements without any difficult-to-control structures or processes. Simple modifications to a standard local oxidation of silicon (LOCOS) process flow minimize encroachment without introducing defects. These modifications include an HF dip after nitride patterning to form a cavity self-aligned to the nitride edge, reoxidation of exposed silicon, and polysilicon deposition to fill the cavity. Physical (scanning electron micrographs) and electrical (gate oxide quality, diode integrity, and W/sub eff/) data which indicate that cavity reoxidation is critical to obtaining significant bird's beak reduction without defect introduction are presented.Keywords
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