P‐type doping and devices based on ZnO
Top Cited Papers
- 11 February 2004
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 241 (3) , 624-630
- https://doi.org/10.1002/pssb.200304271
Abstract
No abstract availableKeywords
This publication has 50 references indexed in Scilit:
- Nitrogen-Doped p-Type ZnO Layers Prepared with H2O Vapor-Assisted Metalorganic Molecular-Beam EpitaxyJapanese Journal of Applied Physics, 2002
- Control of p- and n-type conductivity in sputter deposition of undoped ZnOApplied Physics Letters, 2002
- p-Type conduction in transparent semiconductor ZnO thin films induced by electron cyclotron resonance N2O plasmaOptical Materials, 2002
- The regulation of defect concentrations by means of separation layer in wide-band II-VI compoundsSemiconductor Science and Technology, 2001
- Recent advances in ZnO materials and devicesMaterials Science and Engineering: B, 2001
- Pulsed laser reactive deposition of p-type ZnO film enhanced by an electron cyclotron resonance sourceJournal of Crystal Growth, 2001
- Fabrication of the low-resistive p-type ZnO by codoping methodPhysica B: Condensed Matter, 2001
- Synthesis of p-type ZnO filmsJournal of Crystal Growth, 2000
- p-Type Electrical Conduction in ZnO Thin Films by Ga and N CodopingJapanese Journal of Applied Physics, 1999
- Growth of p-type Zinc Oxide Films by Chemical Vapor DepositionJapanese Journal of Applied Physics, 1997