Recent advances in ZnO materials and devices
Top Cited Papers
- 1 March 2001
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 80 (1-3) , 383-387
- https://doi.org/10.1016/s0921-5107(00)00604-8
Abstract
No abstract availableThis publication has 24 references indexed in Scilit:
- Ultraviolet detectors based on epitaxial ZnO films grown by MOCVDJournal of Electronic Materials, 2000
- Growth of high-quality epitaxial ZnO films on α-Al2O3Journal of Crystal Growth, 1999
- Growth of ZnO on Sapphire (0001) by the Vapor Phase Epitaxy Using a Chloride SourceJapanese Journal of Applied Physics, 1999
- Plasma assisted molecular beam epitaxy of ZnO on c -plane sapphire: Growth and characterizationJournal of Applied Physics, 1998
- Defects and interfaces in epitaxial ZnO/α-Al2O3 and AlN/ZnO/α-Al2O3 heterostructuresJournal of Applied Physics, 1998
- MOCVD layer growth of ZnO using DMZn and tertiary butanolSemiconductor Science and Technology, 1998
- Electrical properties of bulk ZnOSolid State Communications, 1998
- Growth of ZnO Thin Film by Laser MBE: Lasing of Exciton at Room TemperaturePhysica Status Solidi (b), 1997
- High quality crystalline ZnO buffer layers on sapphire (001) by pulsed laser deposition for III–V nitridesApplied Physics Letters, 1997
- Electronic Properties of Vapor-Grown Heteroepitaxial ZnO Film on SapphireJapanese Journal of Applied Physics, 1983