MOCVD layer growth of ZnO using DMZn and tertiary butanol

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Abstract
Highly conductive polycrystalline ZnO films have been grown by metal organic chemical vapour deposition (MOCVD) using dimethylzinc (DMZn), dimethylzinc-triethylamine (DMZn-TEN) and tertiary butanol (tBuOH) as precursors. When (DMZn-TEN) is used the efficiency of the zinc precursors is reduced by the formation of gas-phase adducts. Films grown by DMZn-TEN are oriented with the c axis in the growth direction. The films are transparent. Specific resistivities as low as and Hall mobilities up to have been achieved in n-doped films where n-butylchloride and triethylgallium have been used as dopant sources.
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