Growth of ZnO on Sapphire (0001) by the Vapor Phase Epitaxy Using a Chloride Source
- 1 April 1999
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 38 (4B) , L454
- https://doi.org/10.1143/jjap.38.l454
Abstract
Zinc oxide (ZnO) films were deposited on sapphire (0001) substrates by vapor phase epitaxy using ZnCl2 as a chloride source. The X-ray diffractogram showed a typical pattern of epitaxially grown ZnO with a hexagonal structure, and a full width at half-maximum (FWHM) of 23.3 min was obtained in the X-ray diffraction profile. Growth rate of the ZnO film increased with increasing growth temperature, the growth rate varied from 0.5 to 3.0 µm/h. A strong band edge emission at 370.0 nm was observed at 20 K photoluminescence spectra.Keywords
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