Transient Response of Photoluminescence for Electric Field in a GaAs/Al0.7Ga0.3As Single Quantum Well: Evidence for Field-Induced Increase in Carrier Life Time
- 1 August 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (8A) , L586-588
- https://doi.org/10.1143/jjap.24.l586
Abstract
Transient photoluminescence measurements for pulsed electric field at room temperature on a GaAs/AlGaAs single quantum well structure have been carried out to clarify the field-dependence of the recombination life time of carriers. The life time increases with the increasing electric field in a marked contrast to the previously reported results. The present results are consistently explained in terms of the field-induced reduction in the overlap between the electron and hole wave functions inside the GaAs well.Keywords
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