Atomic-layer epitaxy of (111)CdTe on BaF2 substrates
- 19 December 1988
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (25) , 2519-2521
- https://doi.org/10.1063/1.100529
Abstract
Atomic‐layer epitaxy of (111)CdTe single crystalline films on (111)BaF2 substrates is investigated. It is shown that a set of growth parameters exists in which the average growth per cycle of opening and closing the shutters of the constituent element sources is one monolayer. In a substrate temperature range between 260 and 285 °C the growth process is self‐regulative, that means, it is independent of the Te beam intensity and the substrate temperature. At substrate temperatures higher than 285 °C growth is still self‐regulative, but the average growth rate per cycle is less than one monolayer.Keywords
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