Growth Mechanism in Atomic Layer Epitaxy (I) Re‐evaporation of Cd and Te from CdTe(111) Surfaces Monitored by Auger Electron Spectroscopy

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Abstract
The mechanism of atomic layer epitaxy (ALE) of cadmium telluride has been studied. Auger electron spectroscopy is used to measure the isothermal re‐evaporation rates of elemental Cd and Te deposits on the (111)A and (111)B surfaces of CdTe substrates. The results include an observation that the sticking coefficients of Cd and Te are smaller than unity at the growth temperatures typical of CdTe ALE. After desorption the substrates are left partially covered: 35% by a Cd overlayer on the (111)B surface and 72% by Te on the (111)A surface. The re‐evaporation rates of Cd and Te experience a drastic change near the substrate‐deposit interface. These rates appear two orders of magnitude smaller than those of bulk‐like amorphous Cd and Te solids. The activation energies for reevaporation of the near‐interface layer region are estimated to be: 1.5 eV for Te on the (111)A face, 1.0 eV for Te on (111)B and 0.5 eV for Cd on (111)B. It has also been shown that AES can be used to identify the polarity of the CdTe(111) surfaces. The relative difference in peak‐to‐peak intensity ratios of Cd MNN to Te MNN for (111)A and (111)B is (11 ± 2)%.