Evidence for Thermally Generated Defects in Liquid and Glassy
- 20 February 1984
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 52 (8) , 667-670
- https://doi.org/10.1103/physrevlett.52.667
Abstract
Measurement of transient photoconductivity in - through the glass transition temperature gives the temperature dependence of the density of recombination centers. The activation energy of this density increases suddenly at , leading to identification of the centers with negative- defects.
Keywords
This publication has 13 references indexed in Scilit:
- Generalizations of multiple trappingPhilosophical Magazine Part B, 1983
- Transient photoconductivity and photo-induced optical absorption in amorphous semiconductorsPhilosophical Magazine Part B, 1982
- Thermalization and recombination in amorphous semiconductorsSolid State Communications, 1981
- Photocurrent Transient Spectroscopy: Measurement of the Density of Localized States in -Physical Review Letters, 1981
- Defect chemistry and states in the gap of lone-pair semiconductorsJournal of Non-Crystalline Solids, 1978
- Defect chemistry of lone-pair semiconductorsPhilosophical Magazine Part B, 1978
- Valence-Alternation Model for Localized Gap States in Lone-Pair SemiconductorsPhysical Review Letters, 1976
- States in the Gap in Glassy SemiconductorsPhysical Review Letters, 1975
- Model for the Electronic Structure of Amorphous SemiconductorsPhysical Review Letters, 1975
- Thermoelectric behaviour of molten Tl[sbnd]Te alloys at compositions approaching pure thalliumPhilosophical Magazine, 1970