Specific lattice location of Zn in CdTe determined by ion-channeling methods

Abstract
The specific lattice location of Zn in CdTe single crystals has been investigated by ion-channeling methods combined with particle-induced x-ray emission. Observing the asymmetry effects of channeling dips around the [110] axis and analyzing the asymmetry factors for host atoms and doped Zn atoms, it is revealed that almost all Zn atoms occupy the Cd sublattice sites, and Zn-doped CdTe crystals grown by vertical Bridgman methods appear to be almost completely free from the segregation of doped Zn atoms.