Dependence of I-U Characteristics of GaAs MESFETs on Temperature and α-Particle Irradiation
- 16 January 1991
- journal article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 123 (1) , K79-K82
- https://doi.org/10.1002/pssa.2211230153
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Dependence of I-U characteristics of GaAs MESFET on temperature and electron irradiationPhysica Status Solidi (a), 1989
- Radiation effects in GaAs FET devicesProceedings of the IEEE, 1989
- Effects of a buried p-layer on alpha-particle immunity of MESFET's fabricated on semi-insulating GaAs substratesIEEE Electron Device Letters, 1986
- Measurements of Alpha-Particle-Induced Charge in GaAs DevicesIEEE Transactions on Nuclear Science, 1983
- Alpha-particle-induced field and enhanced collection of carriersIEEE Electron Device Letters, 1982