Dependence of I-U characteristics of GaAs MESFET on temperature and electron irradiation
- 16 November 1989
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 116 (1) , K133-K135
- https://doi.org/10.1002/pssa.2211160172
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Electron Radiation Effects on GaAs MESFETsPhysica Status Solidi (a), 1987
- Study of Electron Irradiation-Induced Defects in N-Type Active Layer of GaAs MesfetMaterials Science Forum, 1986
- Transient Radiation Effects in GaAs Devices: Bulk Conduction and Channel Modulation Phenomena in D-MESFET, E-JFET, and N+-Si-N+ StructuresIEEE Transactions on Nuclear Science, 1984