Electron Radiation Effects on GaAs MESFETs
- 16 August 1987
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 102 (2) , 843-848
- https://doi.org/10.1002/pssa.2211020248
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
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- Changes in the electrical properties of GaAs due to electron irradiationJournal of Applied Physics, 1985
- Low temperature electron damage studies in n-type GaAsPhysica B+C, 1983
- Transient radiation study of GaAs metal semiconductor field effect transistors implanted in Cr-doped and undoped substratesJournal of Applied Physics, 1981
- Electron-irradiation defects in-type GaAsPhysical Review B, 1980
- Long-Term Radiation Transients in GaAs FETsIEEE Transactions on Nuclear Science, 1979
- Radiation Effects on GaAs MESFETsIEEE Transactions on Nuclear Science, 1978
- Neutron Degradation of Ion-Implanted and Uniformly Doped Enhancement Mode GaAs JFET'sIEEE Transactions on Nuclear Science, 1978
- Radiation Effects in Enhancement Mode GAAS Junction Field Effect TransistorsIEEE Transactions on Nuclear Science, 1977