Long-Term Radiation Transients in GaAs FETs
- 1 January 1979
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 26 (6) , 5080-5086
- https://doi.org/10.1109/tns.1979.4330277
Abstract
A long-term transient response mechanism has been discovered in certain GaAs FETs and FET logic circuits exposed to low level (~ 100 rad) ionizing radiation pulses. Recovery times ranging from 1 to 70 seconds have been measured following room temperature exposures. Charge trapping within the semiinsulating GaAs substrate appears to be a mechanism responsible for the observed behavior. Experiments conducted between 0° and 200°C have identified an acceptor level characterized by an activation energy in the 0.7 to 0.8 eV range.Keywords
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