Analyses of transient capacitance experiments for AuGaAs Schottky barrier diodes in the presence of deep impurities and the interfacial layer
- 31 December 1973
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 16 (12) , 1481-1486
- https://doi.org/10.1016/0038-1101(73)90065-8
Abstract
No abstract availableKeywords
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