Transient Phenomena in Capacitance and Reverse Current in a GaAs Schottky Barrier Diode

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Abstract
A GaAs Schottky barrier diode was prepared by evaporating Au onto the (1̄1̄1̄) surface of a n-type GaAs crystal whose carrier concentration was 2×1016 cm-3. When a reverse voltage was applied to this diode, to this diode, transient phenomena were observed in the capacitance as well as in the reverse current. The time constants associated with the transient phenomena were reduced appreciably by exposing the diode to monochromatic lights with photon energies lower than the band gap of GaAs. The capacitance C s and the reverse current I s observed in a dark steady state condition changed by an amount of (Δ C s ) s and (Δ I s ) s respectively when the diode was exposed to the monochromatic lights. Sign of (Δ C s ) s is the same as that of (Δ I s ) s , and sign reversal occurs at photon energy of about 1.1 eV. A tentative explanation is given for the sign reversal and the common sign of (Δ C s ) s and (Δ I s ) s .

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