Leakage Current in Zinc-Diffused GaAs Diodes

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Abstract
The leakage current in the dark and the photocurrent in zinc diffused GaAs diodes have been measured at room temperature in air, and the results have been explained qualitatively in terms of the channel effect. The theory of channel leakage current developed previonsly for Ge diodes has been slightly modified to take account of the greater generation recombination current in GaAs diodes. One characteristic of photocurrent in GaAs diodes is that a long time, say one hour, is required to reach a new steady state of photocurrent when the bias voltage is changed. An analysis of the photocurrent flowing through the channel indicates that the life time of holes is of the order of 2×10-10sec.