Fermi Level Position at Semiconductor Surfaces
- 1 June 1963
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 10 (11) , 471-472
- https://doi.org/10.1103/physrevlett.10.471
Abstract
DOI: https://doi.org/10.1103/PhysRevLett.10.471Keywords
This publication has 8 references indexed in Scilit:
- PHOTOEMISSION FROM Au AND Cu INTO CdSApplied Physics Letters, 1963
- Metal—Semiconductor Barrier Height Measurement by the Differential Capacitance Method—One Carrier SystemJournal of Applied Physics, 1963
- METALS CONTACTS ON CLEAVED SILICON SURFACESAnnals of the New York Academy of Sciences, 1963
- Attenuation Length Measurements of Hot Electrons in Metal FilmsPhysical Review B, 1962
- RANGE OF PHOTOEXCITED HOLES IN AuApplied Physics Letters, 1962
- Photoemission of Holes from Tin into Gallium ArsenidePhysical Review Letters, 1962
- A Polishing Etchant for III–V SemiconductorsJournal of the Electrochemical Society, 1962
- Observation of Solid-State Photoemission from Tin into GermaniumPhysical Review Letters, 1961