Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300°K
- 30 June 1968
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 11 (6) , 599-602
- https://doi.org/10.1016/0038-1101(68)90012-9
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Quantum-Transport Theories and Multiple Scattering in Doped Semiconductors. II. Mobility of-type Gallium ArsenidePhysical Review B, 1967
- Resistivity of Bulk Silicon and of Diffused Layers in SiliconBell System Technical Journal, 1962
- Relation Between Surface Concentration and Average Conductivity in Diffused Layers in GermaniumBell System Technical Journal, 1961
- Hole and electron mobilities in doped silicon from radiochemical and conductivity measurementsJournal of Physics and Chemistry of Solids, 1960
- Drift Mobilities in Semiconductors. I. GermaniumPhysical Review B, 1953