Resistivity of Bulk Silicon and of Diffused Layers in Silicon
- 1 March 1962
- journal article
- website
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Bell System Technical Journal
- Vol. 41 (2) , 387-410
- https://doi.org/10.1002/j.1538-7305.1962.tb02415.x
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- Detailed analysis of thin phosphorus-diffused layers in p-type siliconSolid-State Electronics, 1961
- Electron Mobilities and Tunneling Currents in SiliconJournal of Applied Physics, 1961
- Hole and electron mobilities in doped silicon from radiochemical and conductivity measurementsJournal of Physics and Chemistry of Solids, 1960
- A new device using the tunneling process in narrow p-n junctionsSolid-State Electronics, 1960
- Impurity Compensation and Magnetoresistance in p-Type SiliconJournal of Applied Physics, 1959
- Conductivity Mobilities of Electrons and Holes in Heavily Doped SiliconPhysical Review B, 1957
- Drift and Conductivity Mobility in SiliconPhysical Review B, 1956
- Electrical Properties of Near-Degenerate Boron-Doped SiliconPhysical Review B, 1955
- Electrical Properties of Silicon Containing Arsenic and BoronPhysical Review B, 1954
- Drift Mobilities in Semiconductors. II. SiliconPhysical Review B, 1954